Peter Dunstan's Publications page

2008

30. X-ray photoelectron spectroscopy studies on the formation of chromium ontacts to single-crystal CVD diamond. D. Doneddu, O.J. Guy, P.R. Dunstan TGG Maffeis, KS Teng, SP Wilks, P Igic, D Twitchen, RM Clement, Surface Science 602 (2008) 1135.

29. Characterization of MOS interfaces on protected and un-protected 4H-SiC surfaces, M Lodzinski, A Perez-Tomas, OJ Guy, N Penny, S Batcup, OA Al-Hartomy, PR Dunstan, S Wilks, P Igic, 26th International Conference On Microelectronics 1 & 2 Proceedings (2008) 541.

2007

28. Calculation of quantum-dot blinking using the Gillespie Monte Carlo algorithm. MR Brown, P Rees, S Wilks, M Holton, P Dunstan, HD Summers, Z Chong, IET Optoelectronics 1 (2007) 280.

27. Imaging concentric modulations in transverse modes of a vertical-cavity surface emitting laser using a scanning near-field optical microscope. MD Holton,P Rees, PR Dunstan, Journal Of Applied Physics 101 (2007) 023103.

26. Fluorescence imaging and investigations of directly labeled chromosomes using scanning near-field optical microscopy. RM Baylis, SH Doak, MD Holton and P.R Dunstan, Ultramicroscopy 107 (2007) 308.

2006

25. D. Doneddu, O.J. Guy, R.M. Baylis, L. Chen, P.R. Dunstan, P.A. Mawby, C.F. Pirri, S. Ferrero, D. Twitchen, A. Tajani and M. Schwitters ‘SNOM investigation of surface morphology changes during Cr/Au contact fabrication on single-crystal CVD diamond’ Silicon Carbide And Related Materials 2005, Pts 1 And 2: Materials Science Forum vol. 527-529 (2006)1587.

24. J. Kettle, R.M. Perks and P. Dunstan ‘Localised joule heating in AlGaInP light emitting diodes’ Electron. Lett. 42, 1122-1123 (2006).

23. RM Baylis, SH Doak, J Parry and P.R Dunstan, ‘Chromosome morphology after long term storage investigated by scanning near-field optical microscopy’, Journal of Microscopy 221, 177-182, (2006).

22. O.J. Guy, D. Doneddu, L. Chen, M.R. Jennings, M.P. Ackland, R. Baylis, M.D. Holton, P.R. Dunstan, S.P. Wilks and P.A. Mawby, ‘Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap: Investigated using current voltage measurements and atomic force microscopy’. Diamond And Related Materials 15 (9): 1472-1477 (2006).

2005

21. K.S. Teng, R.J. Cobley, M.R. Brown, S.P. Wilks and P.R. Dunstan. ‘Investigation on (Al0.7Ga0.3)0.5In0.5P/(Al0.3Ga0.7)0.5In0.5P multi-quantum barrier superlattice using cross-sectional scanning tunneling microscopy’ Journal of Applied Physics 98, 033525 (2005).

20. M.P. Ackland, P.R. Dunstan and P. Rees, ‘Near-field scanning optical microscopy and near-field induced photocurrent investigations of buried heterostructure multi-quantum well lasers’, Journal of Microscopy 220, Pt 3, pp.229–235, (2005).

2004
19. KS Teng, PR Dunstan, SP Wilks, RH Williams, ‘STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAs’, Applied Surface Science 235 (3), pp.313-321, (2004).

2003
18. P R Dunstan, T G G Maffeis, M P Ackland, G T Owen and S P Wilks. ‘The correlation of electronic properties with nanoscale morphological variations measured by SPM on semiconductor devices’. Journal of Physics: Condensed Matter 15, No 42, S3095-S3112, (2003).

2002
17. S P Wilks, K S Teng, P R Dunstan and R H Williams. ‘The passivation of atomic scale defects present on III-V semiconductor laser facets: an STM/STS investigation’. Applied Surface Science 190, Issues 1-4, pp.467-474 (2002).

2000
16. A Kestle, S P Wilks, P R Dunstan, M Pritchard and P A Mawby. ‘Improved Ni/SiC Schottky diode formation’. Electronic Letters 36, No.3, pp.267-268, (2000).

15. A Koh, A Kestle, PR Dunstan, MA Pritchard, SP Wilks, G Pope and PA Mawby. ‘Controlled thermal oxidation of Sacrificial Si on 4H-SiC epilayer’. Materials Science Forum, 338-3, pp.1081-1084, (2000).

14. A Kestle, SP Wilks, PR Dunstan, MA Pritchard, G Pope, A Koh and PA Mawby. ‘A UHV study of Ni/SiC Schottky barrier and Ohmic formation’. Materials Science Forum, 338-3, pp.1025-1028, (2000).

13. A Koh, A Kestle, SP Wilks, PR Dunstan, CJ Wright, MA Pritchard, G Pope, PA Mawby and WR Bowen. ‘Surface studies on thermal oxidation on 4H-SiC epilayer’. Materials Science Forum, 338-3, pp.403-404, (2000).

1999
12. M Pan, S P Wilks, P R Dunstan, M Pritchard, R H Williams, D S Cammack and S A Clark. ‘Effect of ZnSe intralayer on the Si/Ge(111) heterojunction band offset’. Journal of Thin Solid Films 344, pp.605-608, (1999).

11. T G G Maffies, S A Clark, P R Dunstan, S P Wilks, D A Evans, F Peiro and P Parbrook. ‘GaN cleaning by Ga deposition, reduction and re-evaporation: A SXPS study’. Physica Status Solidi. A- Applied Research 176, no.1, pp751-754. (1999).

10. P R Dunstan, S P Wilks, K S Teng, M Pritchard and R H Williams. ‘The growth and electrical properties of silicon on GaAs(110) studied by scanning tunnelling microscopy and spectroscopy’. Journal of Applied Physics 86, no.10, pp.5636-5641, (1999).

9. S P Wilks, R H Williams, M Pan, P R Dunstan, B C C Cowie. ‘Use of ultrathin ZnSe dipole layers for band offset engineering at Ge and Si homo/heterojunctions’ Journal of Vacuum Science and Technology B 17 (4): pp.1666-1673 (1999).

8. K S Teng, P R Dunstan, S P Wilks, and R H Williams. ‘The electronic passivation properties of Si nano-islands on GaAs(110) step defects induced by cleaving’. Applied Physics Letters. 75, No.17, pp.2590-2592, (1999).

1998
7. D.S. Cammack, S.A. Clark, P. Dunstan, M Pan, S.P.Wilks and M. Elliott. ‘Formation of In- and Au-In0.52Al0.48As (100) interfaces: A soft x-ray photoemission spectroscopy study’. Journal of Applied Physics 84, no. 8, pp.4443-4447, (1998).

6. D.S. Cammack, S. McGregor, J. McChesney, S.A. Clark, P. Dunstan, S. Burgess, S.P.Wilks, F. Peiro, J.-C. Ferrer, A. Cornet, J R Morante A. Kestle, D.I. Westwood and M. Elliott. ‘An investigation of the electrical and chemical properties of intimate metal-InxGa1-xAs(100) interfaces at room and cryogenic temperatures’. Applied Surface Science 123, pp.501-507, (1998).

5. P.R. Dunstan, S.P. Wilks, S.R. Burgess, M. Pan, R.H. Williams, D.S. Cammack and S.A. Clark. ‘The electronic and structural properties of the Si - GaAs(110) interface’. Applied Surface Science 123, pp.533-537, (1998).

4. S.P. Wilks, S.R. Burgess, P. Dunstan, M. Pan, D.S. Cammack S.A. Clark and D.I. Westwood. ‘Band engineering at the GaAs-AlGaAs heterojunction using ultra-thin Si and Be dipole layers: a comparison of modification techniques’. Applied Surface Science 123, pp.528-532, (1998).

3. M Pan, S P Wilks, P R Dunstan, M Pritchard and R H Williams. ’Modification of the band offset by a ZnSe intralayer at the Si/Ge(111) interface’. Applied Physics Letters 27, no. 21, pp.2707-2709, (1998).

1997
2. D.S. Cammack, S. McGregor, J. McChesney, I.M. Dharmadasa, S.A. Clark, P. Dunstan, S. Burgess S.P.Wilks and M. Elliott. ‘A photoemission study of the formation of intimate In-InGaAs(100) contacts at room and cryogenic temperatures’. Journal of Applied Physics 81, pp. 7876-7879 (1997).

1995
1. S. R Burgess, B. C. C. Cowie, S. P. Wilks, P. R. Dunstan, C. J. Dunscombe and R. H. Williams. ’A surface extended X-ray absorption fine structure study of tellurium adsorbed onto Si(100)’. Applied Surface Science 104, pp.152-157 (1995).

TEACHING	HOMEPAGE	RESEARCH
2008 30. X-ray photoelectron spectroscopy studies on the formation of chromium ontacts to single-crystal CVD diamond. D. Doneddu, O.J. Guy, P.R. Dunstan TGG Maffeis, KS Teng, SP Wilks, P Igic, D Twitchen, RM Clement, Surface Science 602 (2008) 1135. 29. Characterization of MOS interfaces on protected and un-protected 4H-SiC surfaces, M Lodzinski, A Perez-Tomas, OJ Guy, N Penny, S Batcup, OA Al-Hartomy, PR Dunstan, S Wilks, P Igic, 26th International Conference On Microelectronics 1 & 2 Proceedings (2008) 541. 2007 28. Calculation of quantum-dot blinking using the Gillespie Monte Carlo algorithm. MR Brown, P Rees, S Wilks, M Holton, P Dunstan, HD Summers, Z Chong, IET Optoelectronics 1 (2007) 280. 27. Imaging concentric modulations in transverse modes of a vertical-cavity surface emitting laser using a scanning near-field optical microscope. MD Holton,P Rees, PR Dunstan, Journal Of Applied Physics 101 (2007) 023103. 26. Fluorescence imaging and investigations of directly labeled chromosomes using scanning near-field optical microscopy. RM Baylis, SH Doak, MD Holton and P.R Dunstan, Ultramicroscopy 107 (2007) 308. 2006 25. D. Doneddu, O.J. Guy, R.M. Baylis, L. Chen, P.R. Dunstan, P.A. Mawby, C.F. Pirri, S. Ferrero, D. Twitchen, A. Tajani and M. Schwitters ‘SNOM investigation of surface morphology changes during Cr/Au contact fabrication on single-crystal CVD diamond’ Silicon Carbide And Related Materials 2005, Pts 1 And 2: Materials Science Forum vol. 527-529 (2006)1587. 24. J. Kettle, R.M. Perks and P. Dunstan ‘Localised joule heating in AlGaInP light emitting diodes’ Electron. Lett. 42, 1122-1123 (2006). 23. RM Baylis, SH Doak, J Parry and P.R Dunstan, ‘Chromosome morphology after long term storage investigated by scanning near-field optical microscopy’, Journal of Microscopy 221, 177-182, (2006). 22. O.J. Guy, D. Doneddu, L. Chen, M.R. Jennings, M.P. Ackland, R. Baylis, M.D. Holton, P.R. Dunstan, S.P. Wilks and P.A. Mawby, ‘Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap: Investigated using current voltage measurements and atomic force microscopy’. Diamond And Related Materials 15 (9): 1472-1477 (2006). 2005 21. K.S. Teng, R.J. Cobley, M.R. Brown, S.P. Wilks and P.R. Dunstan. ‘Investigation on (Al0.7Ga0.3)0.5In0.5P/(Al0.3Ga0.7)0.5In0.5P multi-quantum barrier superlattice using cross-sectional scanning tunneling microscopy’ Journal of Applied Physics 98, 033525 (2005). 20. M.P. Ackland, P.R. Dunstan and P. Rees, ‘Near-field scanning optical microscopy and near-field induced photocurrent investigations of buried heterostructure multi-quantum well lasers’, Journal of Microscopy 220, Pt 3, pp.229–235, (2005). 2004 19. KS Teng, PR Dunstan, SP Wilks, RH Williams, ‘STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAs’, Applied Surface Science 235 (3), pp.313-321, (2004). 2003 18. P R Dunstan, T G G Maffeis, M P Ackland, G T Owen and S P Wilks. ‘The correlation of electronic properties with nanoscale morphological variations measured by SPM on semiconductor devices’. Journal of Physics: Condensed Matter 15, No 42, S3095-S3112, (2003). 2002 17. S P Wilks, K S Teng, P R Dunstan and R H Williams. ‘The passivation of atomic scale defects present on III-V semiconductor laser facets: an STM/STS investigation’. Applied Surface Science 190, Issues 1-4, pp.467-474 (2002). 2000 16. A Kestle, S P Wilks, P R Dunstan, M Pritchard and P A Mawby. ‘Improved Ni/SiC Schottky diode formation’. Electronic Letters 36, No.3, pp.267-268, (2000). 15. A Koh, A Kestle, PR Dunstan, MA Pritchard, SP Wilks, G Pope and PA Mawby. ‘Controlled thermal oxidation of Sacrificial Si on 4H-SiC epilayer’. Materials Science Forum, 338-3, pp.1081-1084, (2000). 14. A Kestle, SP Wilks, PR Dunstan, MA Pritchard, G Pope, A Koh and PA Mawby. ‘A UHV study of Ni/SiC Schottky barrier and Ohmic formation’. Materials Science Forum, 338-3, pp.1025-1028, (2000). 13. A Koh, A Kestle, SP Wilks, PR Dunstan, CJ Wright, MA Pritchard, G Pope, PA Mawby and WR Bowen. ‘Surface studies on thermal oxidation on 4H-SiC epilayer’. Materials Science Forum, 338-3, pp.403-404, (2000). 1999 12. M Pan, S P Wilks, P R Dunstan, M Pritchard, R H Williams, D S Cammack and S A Clark. ‘Effect of ZnSe intralayer on the Si/Ge(111) heterojunction band offset’. Journal of Thin Solid Films 344, pp.605-608, (1999). 11. T G G Maffies, S A Clark, P R Dunstan, S P Wilks, D A Evans, F Peiro and P Parbrook. ‘GaN cleaning by Ga deposition, reduction and re-evaporation: A SXPS study’. Physica Status Solidi. A- Applied Research 176, no.1, pp751-754. (1999). 10. P R Dunstan, S P Wilks, K S Teng, M Pritchard and R H Williams. ‘The growth and electrical properties of silicon on GaAs(110) studied by scanning tunnelling microscopy and spectroscopy’. Journal of Applied Physics 86, no.10, pp.5636-5641, (1999). 9. S P Wilks, R H Williams, M Pan, P R Dunstan, B C C Cowie. ‘Use of ultrathin ZnSe dipole layers for band offset engineering at Ge and Si homo/heterojunctions’ Journal of Vacuum Science and Technology B 17 (4): pp.1666-1673 (1999). 8. K S Teng, P R Dunstan, S P Wilks, and R H Williams. ‘The electronic passivation properties of Si nano-islands on GaAs(110) step defects induced by cleaving’. Applied Physics Letters. 75, No.17, pp.2590-2592, (1999). 1998 7. D.S. Cammack, S.A. Clark, P. Dunstan, M Pan, S.P.Wilks and M. Elliott. ‘Formation of In- and Au-In0.52Al0.48As (100) interfaces: A soft x-ray photoemission spectroscopy study’. Journal of Applied Physics 84, no. 8, pp.4443-4447, (1998). 6. D.S. Cammack, S. McGregor, J. McChesney, S.A. Clark, P. Dunstan, S. Burgess, S.P.Wilks, F. Peiro, J.-C. Ferrer, A. Cornet, J R Morante A. Kestle, D.I. Westwood and M. Elliott. ‘An investigation of the electrical and chemical properties of intimate metal-InxGa1-xAs(100) interfaces at room and cryogenic temperatures’. Applied Surface Science 123, pp.501-507, (1998). 5. P.R. Dunstan, S.P. Wilks, S.R. Burgess, M. Pan, R.H. Williams, D.S. Cammack and S.A. Clark. ‘The electronic and structural properties of the Si - GaAs(110) interface’. Applied Surface Science 123, pp.533-537, (1998). 4. S.P. Wilks, S.R. Burgess, P. Dunstan, M. Pan, D.S. Cammack S.A. Clark and D.I. Westwood. ‘Band engineering at the GaAs-AlGaAs heterojunction using ultra-thin Si and Be dipole layers: a comparison of modification techniques’. Applied Surface Science 123, pp.528-532, (1998). 3. M Pan, S P Wilks, P R Dunstan, M Pritchard and R H Williams. ’Modification of the band offset by a ZnSe intralayer at the Si/Ge(111) interface’. Applied Physics Letters 27, no. 21, pp.2707-2709, (1998). 1997 2. D.S. Cammack, S. McGregor, J. McChesney, I.M. Dharmadasa, S.A. Clark, P. Dunstan, S. Burgess S.P.Wilks and M. Elliott. ‘A photoemission study of the formation of intimate In-InGaAs(100) contacts at room and cryogenic temperatures’. Journal of Applied Physics 81, pp. 7876-7879 (1997). 1995 1. S. R Burgess, B. C. C. Cowie, S. P. Wilks, P. R. Dunstan, C. J. Dunscombe and R. H. Williams. ’A surface extended X-ray absorption fine structure study of tellurium adsorbed onto Si(100)’. Applied Surface Science 104, pp.152-157 (1995).
TEACHING	HOMEPAGE	RESEARCH